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A low voltage TiO2 varistor doped with Nb2O5, Bi2O3 and SrO was systematically investigated. The two performance parameters, the nonlinear coefficient (α) and breakdown voltage per grain boundary were estimated from the I–V measurements and found to be α = 8.4 and Egbl ...
An industrially viable solution-based processing route using minimal amounts of solvent has been used to prepare bulk quantity nanopowders (average particle size 15 ± 3 nm) for the fabrication of ZnO varistors. The xerogels, calcined powders and sintered materials were fully characterised...
Author(s): Shinzo Yoshikado, Masayuki Takada, Yuuki Sato The impurities segregated at the grain boundary of ZnO grains, such as Bi2O3, are important factor to obtain the nonlinear voltage-current (V-I ) characteristics of a Bi-added ZnO varistor. The deterioration of V-I characteristics progresses ...
Despite its many benefits, one of the few disadvantages of semiconductortechnology is the vulnerability of solid state devices to undesired increase intemperature, voltage and current . Even low voltage pulses can produceinterference and damages with several consequences. Thus, as electronics areuse...
Varistors are nonlinear two-electrode semiconductor voltage-dependant resistors. The current in a varistor is proportional to applied voltage raised to a power. These devices are normally made of zinc oxide. Upon application of a high voltage pulse (such as lighting) they conduct a large current, th...